auf Bestellung 7200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 4.58 EUR |
| 4000+ | 4.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUM110P08-11L-E3 Vishay
Description: MOSFET P-CH 80V 110A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V, Power Dissipation (Max): 13.6W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 40 V.
Weitere Produktangebote SUM110P08-11L-E3 nach Preis ab 4.15 EUR bis 10.82 EUR
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SUM110P08-11L-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 80V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 40 V |
auf Bestellung 35200 Stücke: Lieferzeit 21-28 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -110A; Idm: -120A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -110A Pulsed drain current: -120A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 11.2mΩ Mounting: SMD Gate charge: 0.27µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 796 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -110A; Idm: -120A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -110A Pulsed drain current: -120A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 11.2mΩ Mounting: SMD Gate charge: 0.27µC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 796 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
auf Bestellung 7200 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 80V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 40 V |
auf Bestellung 35371 Stücke: Lieferzeit 21-28 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay / Siliconix |
MOSFET 80V 110A 375W |
auf Bestellung 96850 Stücke: Lieferzeit 14-28 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : VISHAY |
Description: VISHAY - SUM110P08-11L-E3 - Leistungs-MOSFET, p-Kanal, 80 V, 110 A, 0.0093 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0093ohm |
auf Bestellung 13470 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : VISHAY |
Description: VISHAY - SUM110P08-11L-E3 - Leistungs-MOSFET, p-Kanal, 80 V, 110 A, 0.0093 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX Verlustleistung: 375W Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0093ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (10-Jun-2022) |
auf Bestellung 3152 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
auf Bestellung 19200 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| SUM110P08-11L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |