SUM110P08-11L-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 80V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 40 V
auf Bestellung 36800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 3.53 EUR |
| 1600+ | 3.52 EUR |
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Technische Details SUM110P08-11L-E3 Vishay Siliconix
Description: MOSFET P-CH 80V 110A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V, Power Dissipation (Max): 13.6W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 40 V.
Weitere Produktangebote SUM110P08-11L-E3 nach Preis ab 2.66 EUR bis 8.41 EUR
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SUM110P08-11L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
auf Bestellung 4097 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -110A; Idm: -120A Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -120A Drain current: -110A Drain-source voltage: -80V Gate charge: 0.27µC On-state resistance: 11.2mΩ Power dissipation: 125W Gate-source voltage: ±20V Case: D2PAK; TO263 Technology: TrenchFET® Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 608 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -110A; Idm: -120A Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -120A Drain current: -110A Drain-source voltage: -80V Gate charge: 0.27µC On-state resistance: 11.2mΩ Power dissipation: 125W Gate-source voltage: ±20V Case: D2PAK; TO263 Technology: TrenchFET® Kind of channel: enhancement |
auf Bestellung 608 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay / Siliconix |
MOSFETs 80V 110A 375W |
auf Bestellung 80601 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 80V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 40 V |
auf Bestellung 36976 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : VISHAY |
Description: VISHAY - SUM110P08-11L-E3 - Leistungs-MOSFET, p-Kanal, 80 V, 110 A, 0.0112 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0112ohm SVHC: Lead (07-Nov-2024) |
auf Bestellung 22021 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : VISHAY |
Description: VISHAY - SUM110P08-11L-E3 - Leistungs-MOSFET, p-Kanal, 80 V, 110 A, 0.0093 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0093ohm SVHC: Lead (07-Nov-2024) |
auf Bestellung 23723 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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SUM110P08-11L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| SUM110P08-11L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |