SUM36N20-54P-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Part Status: Obsolete
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.12W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details SUM36N20-54P-E3 Vishay Siliconix
Description: MOSFET N-CH 200V 36A TO263, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Part Status: Obsolete, Supplier Device Package: TO-263 (D²Pak), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 3.12W (Ta), 166W (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote SUM36N20-54P-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
SUM36N20-54P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 36A TO263 Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Part Status: Obsolete Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.12W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SUM36N20-54P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Part Status: Obsolete
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.12W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Part Status: Obsolete
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.12W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH