SUM40010EL-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11155 pF @ 30 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 2.7 EUR |
| 1600+ | 2.31 EUR |
| 2400+ | 2.17 EUR |
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Technische Details SUM40010EL-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: D²PAK (TO-263), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11155 pF @ 30 V.
Weitere Produktangebote SUM40010EL-GE3 nach Preis ab 3.03 EUR bis 4.82 EUR
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SUM40010EL-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11155 pF @ 30 V |
auf Bestellung 4938 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM40010EL-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 40V Vds 20V Vgs D2PAK (TO-263) |
auf Bestellung 3174 Stücke: Lieferzeit 795-799 Tag (e) |
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SUM40010EL-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| SUM40010EL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 120A; Idm: 300A Case: TO263 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Drain-source voltage: 40V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Gate charge: 230nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| SUM40010EL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 120A; Idm: 300A Case: TO263 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Drain-source voltage: 40V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Gate charge: 230nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A |
Produkt ist nicht verfügbar |