SUM50010E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 150A TO263
Packaging: Strip
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.25 EUR |
| 10+ | 4.62 EUR |
| 100+ | 3.28 EUR |
| 800+ | 2.57 EUR |
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Technische Details SUM50010E-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 150A TO263, Packaging: Strip, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V.
Weitere Produktangebote SUM50010E-GE3 nach Preis ab 2.6 EUR bis 6.27 EUR
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SUM50010E-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 60V Vds; 20V Vgs TO-263 |
auf Bestellung 905 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM50010E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 150A 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| SUM50010E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 212nC Kind of package: reel; tape Kind of channel: enhancement |
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