auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUM65N20-30-E3 Vishay
Description: MOSFET N-CH 200V 65A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V, Power Dissipation (Max): 3.75W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V.
Weitere Produktangebote SUM65N20-30-E3 nach Preis ab 2.77 EUR bis 7.76 EUR
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SUM65N20-30-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM65N20-30-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM65N20-30-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 65A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM65N20-30-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM65N20-30-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM65N20-30-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 200V 65A 375W 30mohm @ 10V |
auf Bestellung 2974 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM65N20-30-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 65A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V |
auf Bestellung 1929 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM65N20-30-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM65N20-30-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM65N20-30-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM65N20-30-E3 Produktcode: 192327
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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SUM65N20-30-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 65A; Idm: 140A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Pulsed drain current: 140A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUM65N20-30-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 65A; Idm: 140A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Pulsed drain current: 140A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |