Weitere Produktangebote SUM70060E-GE3 nach Preis ab 1.27 EUR bis 4.56 EUR
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SUM70060E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 131A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V |
auf Bestellung 7200 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70060E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 131A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V |
auf Bestellung 7663 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70060E-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs D2PAK (TO-263) |
auf Bestellung 8883 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70060E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 131A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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SUM70060E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 131A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| SUM70060E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 131A Pulsed drain current: 240A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |



