Technische Details SUM85N03-06P-E3 Vishay
Description: MOSFET N-CH 30V 85A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 3.75W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V.
Weitere Produktangebote SUM85N03-06P-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SUM85N03-06P-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 85A 3-Pin(2+Tab) D2PAK |
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SUM85N03-06P-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 85A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
Produkt ist nicht verfügbar |