SUM90N03-2M2P-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 5.26 EUR |
| 1600+ | 4.5 EUR |
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Technische Details SUM90N03-2M2P-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V, Power Dissipation (Max): 3.75W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V.
Weitere Produktangebote SUM90N03-2M2P-E3 nach Preis ab 4.84 EUR bis 8.79 EUR
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SUM90N03-2M2P-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 90A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V |
auf Bestellung 1612 Stücke: Lieferzeit 21-28 Tag (e) |
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SUM90N03-2M2P-E3 | Hersteller : Vishay Semiconductors |
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SUM90N03-2M2P-E3 Produktcode: 82556 |
Transistoren > MOSFET N-CH |
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SUM90N03-2M2P-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK |
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| SUM90N03-2M2P-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Pulsed drain current: 200A Power dissipation: 250W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 257nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| SUM90N03-2M2P-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Pulsed drain current: 200A Power dissipation: 250W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 257nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |