auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.34 EUR |
| 10+ | 2.73 EUR |
| 100+ | 2.59 EUR |
| 1000+ | 2.53 EUR |
| 2500+ | 2.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUP70060E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 131A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 131A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V.
Weitere Produktangebote SUP70060E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SUP70060E-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 131A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|
 |
SUP70060E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 131A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|
| SUP70060E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 131A Pulsed drain current: 240A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
SUP70060E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 131A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V |
Produkt ist nicht verfügbar |
|
| SUP70060E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 131A Pulsed drain current: 240A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |