auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 3.72 EUR |
| 50+ | 2.79 EUR |
| 100+ | 2.68 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUP85N10-10-E3 Vishay
Description: MOSFET N-CH 100V 85A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V, Power Dissipation (Max): 3.75W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V.
Weitere Produktangebote SUP85N10-10-E3 nach Preis ab 2.4 EUR bis 10.56 EUR
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SUP85N10-10-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP85N10-10-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; 250W Polarisation: unipolar Case: TO220AB Kind of channel: enhancement Technology: TrenchFET® Type of transistor: N-MOSFET Mounting: THT Drain current: 60A Drain-source voltage: 100V Gate charge: 105nC On-state resistance: 10.5mΩ Power dissipation: 250W Gate-source voltage: ±20V Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 320 Stücke: Lieferzeit 7-14 Tag (e) |
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SUP85N10-10-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; 250W Polarisation: unipolar Case: TO220AB Kind of channel: enhancement Technology: TrenchFET® Type of transistor: N-MOSFET Mounting: THT Drain current: 60A Drain-source voltage: 100V Gate charge: 105nC On-state resistance: 10.5mΩ Power dissipation: 250W Gate-source voltage: ±20V Kind of package: tube |
auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP85N10-10-E3 | Hersteller : Vishay Semiconductors |
MOSFETs TO220 100V 85A N-CH MOSFET |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP85N10-10-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V |
auf Bestellung 315 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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 |
SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |