| Anzahl | Privatkunde |
|---|---|
| 32+ | 5.66 EUR |
| 50+ | 4.28 EUR |
| 100+ | 3.78 EUR |
| 500+ | 3.03 EUR |
| 1000+ | 2.82 EUR |
Produktrezensionen
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Technische Details SUP85N10-10-E3 Vishay
Description: MOSFET N-CH 100V 85A TO220AB, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.75W (Ta), 250W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote SUP85N10-10-E3 nach Preis ab 3.06 EUR bis 11.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SUP85N10-10-E3 | Vishay |
 Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP85N10-10-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; 250W Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO220AB Technology: TrenchFET® Polarisation: unipolar Drain current: 60A Drain-source voltage: 100V Gate charge: 105nC On-state resistance: 10.5mΩ Gate-source voltage: ±20V Power dissipation: 250W |
auf Bestellung 316 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP85N10-10-E3 | Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 316 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP85N10-10-E3 | Vishay Semiconductors |
MOSFETs TO220 100V 85A N-CH MOSFET |
auf Bestellung 384 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP85N10-10-E3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220AB Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 193 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SUP85N10-10-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 5.66 EUR |
| 50+ | 4.38 EUR |
| 100+ | 3.93 EUR |
| 500+ | 3.21 EUR |
| 1000+ | 3.06 EUR |
| SUP85N10-10-E3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; 250W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchFET®
Polarisation: unipolar
Drain current: 60A
Drain-source voltage: 100V
Gate charge: 105nC
On-state resistance: 10.5mΩ
Gate-source voltage: ±20V
Power dissipation: 250W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; 250W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Technology: TrenchFET®
Polarisation: unipolar
Drain current: 60A
Drain-source voltage: 100V
Gate charge: 105nC
On-state resistance: 10.5mΩ
Gate-source voltage: ±20V
Power dissipation: 250W
auf Bestellung 316 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.09 EUR |
| 18+ | 4.86 EUR |
| 25+ | 4.19 EUR |
| 50+ | 4.15 EUR |
| 100+ | 3.84 EUR |
| SUP85N10-10-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB
auf Bestellung 316 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 8.25 EUR |
| 25+ | 7.04 EUR |
| 50+ | 6.82 EUR |
| 100+ | 6.15 EUR |
| SUP85N10-10-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs TO220 100V 85A N-CH MOSFET
MOSFETs TO220 100V 85A N-CH MOSFET
auf Bestellung 384 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.69 EUR |
| 10+ | 4.69 EUR |
| 100+ | 4.27 EUR |
| 500+ | 3.52 EUR |
| 1000+ | 3.47 EUR |
| SUP85N10-10-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 85A TO220AB
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.9 EUR |
| 50+ | 5.8 EUR |
| 100+ | 5.77 EUR |