auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 3.75 EUR |
| 50+ | 2.81 EUR |
| 100+ | 2.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUP85N10-10-E3 Vishay
Description: MOSFET N-CH 100V 85A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V, Power Dissipation (Max): 3.75W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V.
Weitere Produktangebote SUP85N10-10-E3 nach Preis ab 2.69 EUR bis 10 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SUP85N10-10-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SUP85N10-10-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; 250W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 320 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
|
SUP85N10-10-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; 250W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SUP85N10-10-E3 | Hersteller : Vishay Semiconductors |
MOSFETs TO220 100V 85A N-CH MOSFET |
auf Bestellung 696 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SUP85N10-10-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V |
auf Bestellung 193 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |