| Anzahl | Preis |
|---|---|
| 41+ | 3.56 EUR |
| 47+ | 3.06 EUR |
| 51+ | 2.77 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.5 EUR |
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Technische Details SUP90142E-GE3 Vishay
Description: MOSFET N-CH 200V 90A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V.
Weitere Produktangebote SUP90142E-GE3 nach Preis ab 2.31 EUR bis 6.34 EUR
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SUP90142E-GE3 | Vishay |
 Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP90142E-GE3 | Vishay / Siliconix |
MOSFETs 200V Vds 20V Vgs TO-220AB |
auf Bestellung 37625 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP90142E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 90A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V |
auf Bestellung 758 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SUP90142E-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 3.56 EUR |
| 47+ | 2.99 EUR |
| 51+ | 2.67 EUR |
| 100+ | 2.43 EUR |
| 500+ | 2.31 EUR |
| SUP90142E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 200V Vds 20V Vgs TO-220AB
MOSFETs 200V Vds 20V Vgs TO-220AB
auf Bestellung 37625 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.74 EUR |
| 10+ | 3.52 EUR |
| 100+ | 3.15 EUR |
| 500+ | 2.69 EUR |
| SUP90142E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V
Description: MOSFET N-CH 200V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V
auf Bestellung 758 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.34 EUR |
| 50+ | 3.24 EUR |
| 100+ | 2.95 EUR |
| 500+ | 2.42 EUR |