SUP90330E-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 6+ | 3.29 EUR |
| 50+ | 1.6 EUR |
| 100+ | 1.43 EUR |
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Technische Details SUP90330E-GE3 Vishay Siliconix
Description: MOSFET N-CH 200V 35.8A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc), Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V.
Weitere Produktangebote SUP90330E-GE3 nach Preis ab 1.04 EUR bis 3.57 EUR
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SUP90330E-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 200V Vds 20V Vgs TO-220AB |
auf Bestellung 887 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP90330E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 35.8A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| SUP90330E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.8A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 35.8A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 42.2mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 70A |
Produkt ist nicht verfügbar |