SUP90N04-3M3P-GE3 Vishay / Siliconix
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SUP90N04-3M3P-GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 90A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5286 pF @ 20 V.
Weitere Produktangebote SUP90N04-3M3P-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SUP90N04-3M3P-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 40V 90A 3-Pin(3+Tab) TO-220AB T/R |
Produkt ist nicht verfügbar |
|
 |
SUP90N04-3M3P-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 90A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5286 pF @ 20 V |
Produkt ist nicht verfügbar |