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Technische Details SUP90N06-6M0P-E3 Vishay
Description: MOSFET N-CH 60V 90A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 3.75W (Ta), 272W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote SUP90N06-6M0P-E3 nach Preis ab 1.37 EUR bis 7.76 EUR
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SUP90N06-6M0P-E3 | Vishay |
 Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP90N06-6M0P-E3 | Vishay / Siliconix |
MOSFETs 60V 90A 272W 6.0mohm @ 10V |
auf Bestellung 4194 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP90N06-6M0P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 90A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| SUP90N06-6M0P-E3 |
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auf Bestellung 3080 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SUP90N06-6M0P-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-220AB
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 58+ | 2.56 EUR |
| 92+ | 1.57 EUR |
| 95+ | 1.46 EUR |
| 100+ | 1.37 EUR |
| SUP90N06-6M0P-E3 |
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Hersteller: Vishay / Siliconix
MOSFETs 60V 90A 272W 6.0mohm @ 10V
MOSFETs 60V 90A 272W 6.0mohm @ 10V
auf Bestellung 4194 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.78 EUR |
| 10+ | 6.65 EUR |
| 100+ | 5.46 EUR |
| 500+ | 4.84 EUR |
| 1000+ | 4.15 EUR |
| 2500+ | 3.91 EUR |
| SUP90N06-6M0P-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.76 EUR |
| SUP90N06-6M0P-E3 |
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auf Bestellung 3080 Stücke:
Lieferzeit 21-28 Tag (e)