Produkte > ONSEMI > SVC236-TB-E-ON

SVC236-TB-E-ON onsemi

en6800-d.pdf
Hersteller: onsemi
Description: DIFFUSED JUNCTION TYPE SILICON V
Capacitance Ratio: 5
Voltage - Peak Reverse (Max): 16 V
Supplier Device Package: SC-59-3/CP3
Capacitance Ratio Condition: C1/C6.5
Q @ Vr, F: 70 @ 3V, 100MHz
Capacitance @ Vr, F: 16.84pF @ 6.5V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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Technische Details SVC236-TB-E-ON onsemi

Description: DIFFUSED JUNCTION TYPE SILICON V, Capacitance Ratio: 5, Voltage - Peak Reverse (Max): 16 V, Supplier Device Package: SC-59-3/CP3, Capacitance Ratio Condition: C1/C6.5, Q @ Vr, F: 70 @ 3V, 100MHz, Capacitance @ Vr, F: 16.84pF @ 6.5V, 1MHz, Operating Temperature: 125°C (TJ), Diode Type: 1 Pair Common Cathode, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.