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SVD5867NLT4G

SVD5867NLT4G onsemi

NVD5867NL.pdf Hersteller: onsemi
Description: MOSFET N-CH 60V 22A DPAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
auf Bestellung 7425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.46 EUR
5000+ 0.44 EUR
Mindestbestellmenge: 2500
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Technische Details SVD5867NLT4G onsemi

Description: MOSFET N-CH 60V 22A DPAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V, Power Dissipation (Max): 3.3W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V.

Weitere Produktangebote SVD5867NLT4G nach Preis ab 0.48 EUR bis 1.28 EUR

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SVD5867NLT4G SVD5867NLT4G Hersteller : onsemi NVD5867NL.pdf Description: MOSFET N-CH 60V 22A DPAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
auf Bestellung 7425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.2 EUR
17+ 1.05 EUR
100+ 0.73 EUR
500+ 0.61 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 15
SVD5867NLT4G SVD5867NLT4G Hersteller : onsemi NVD5867NL_D-2319346.pdf MOSFET NFET DPAK 60V 18A 43MOHM
auf Bestellung 37381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.28 EUR
10+ 0.91 EUR
100+ 0.71 EUR
500+ 0.64 EUR
1000+ 0.56 EUR
2500+ 0.48 EUR
Mindestbestellmenge: 3
SVD5867NLT4G SVD5867NLT4G Hersteller : ON Semiconductor nvd5867nl-d.pdf Trans MOSFET N-CH 60V 6A Automotive 3-Pin(2+Tab) DPAK T/R
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