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T2N7002AK,LM

T2N7002AK,LM Toshiba Semiconductor and Storage

T2N7002AK_datasheet_en_20150401.pdf?did=29712&prodName=T2N7002AK Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 549000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.04 EUR
6000+ 0.038 EUR
9000+ 0.032 EUR
30000+ 0.03 EUR
75000+ 0.026 EUR
150000+ 0.021 EUR
Mindestbestellmenge: 3000
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Technische Details T2N7002AK,LM Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 200MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V.

Weitere Produktangebote T2N7002AK,LM nach Preis ab 0.047 EUR bis 0.36 EUR

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T2N7002AK,LM T2N7002AK,LM Hersteller : Toshiba Semiconductor and Storage T2N7002AK_datasheet_en_20150401.pdf?did=29712&prodName=T2N7002AK Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 550413 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
77+0.23 EUR
107+ 0.17 EUR
199+ 0.089 EUR
500+ 0.07 EUR
1000+ 0.048 EUR
Mindestbestellmenge: 77
T2N7002AK,LM T2N7002AK,LM Hersteller : Toshiba T2N7002AK_datasheet_en_20150401-1916411.pdf MOSFET Small-signal MOSFET
auf Bestellung 502260 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
143+0.36 EUR
209+ 0.25 EUR
488+ 0.11 EUR
1000+ 0.075 EUR
3000+ 0.057 EUR
9000+ 0.052 EUR
24000+ 0.047 EUR
Mindestbestellmenge: 143