auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4762+ | 0.031 EUR |
| 6000+ | 0.029 EUR |
| 9000+ | 0.021 EUR |
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Technische Details T2N7002AK,LM Toshiba
Description: MOSFET N-CH 60V 200MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V.
Weitere Produktangebote T2N7002AK,LM nach Preis ab 0.02 EUR bis 0.2 EUR
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T2N7002AK,LM | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 60V 0.2A 3-Pin SOT-23 |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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T2N7002AK,LM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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T2N7002AK,LM | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
auf Bestellung 183264 Stücke: Lieferzeit 10-14 Tag (e) |
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T2N7002AK,LM | Hersteller : Toshiba |
MOSFETs Small-signal MOSFET |
auf Bestellung 144794 Stücke: Lieferzeit 10-14 Tag (e) |
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T2N7002AK,LM | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 0.2A 3-Pin SOT-23 |
Produkt ist nicht verfügbar |