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TBC847B,LM

TBC847B,LM Toshiba Semiconductor and Storage

docget.jsp?did=53738&prodName=TBC847
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.055 EUR
6000+0.049 EUR
9000+0.045 EUR
15000+0.042 EUR
21000+0.04 EUR
30000+0.038 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TBC847B,LM Toshiba Semiconductor and Storage

Description: TRANS NPN 50V 0.15A SOT-23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 30nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW.

Weitere Produktangebote TBC847B,LM nach Preis ab 0.048 EUR bis 0.3 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TBC847B,LM TBC847B,LM Toshiba 25C49E78AA48E8C4D8A9C6F15C20A06A181850A24AEE77CC8909D30C8FCBEE8F.pdf Bipolar Transistors - BJT BJT NPN 0.15A 50V
auf Bestellung 9967 Stücke:
Lieferzeit 10-14 Tag (e)
12+0.29 EUR
20+0.18 EUR
100+0.11 EUR
500+0.077 EUR
1000+0.069 EUR
3000+0.055 EUR
6000+0.048 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBC847B,LM TBC847B,LM Toshiba Semiconductor and Storage docget.jsp?did=53738&prodName=TBC847 Description: TRANS NPN 50V 0.15A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
auf Bestellung 74702 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
122+0.17 EUR
199+0.11 EUR
500+0.076 EUR
1000+0.067 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBC847B,LM 25C49E78AA48E8C4D8A9C6F15C20A06A181850A24AEE77CC8909D30C8FCBEE8F.pdf
TBC847B,LM
Hersteller: Toshiba
Bipolar Transistors - BJT BJT NPN 0.15A 50V
auf Bestellung 9967 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+0.29 EUR
20+0.18 EUR
100+0.11 EUR
500+0.077 EUR
1000+0.069 EUR
3000+0.055 EUR
6000+0.048 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TBC847B,LM docget.jsp?did=53738&prodName=TBC847
TBC847B,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
auf Bestellung 74702 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
122+0.17 EUR
199+0.11 EUR
500+0.076 EUR
1000+0.067 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH