TD190N18SOF Infineon Technologies


Infineon_TT190N18SOF_DataSheet_v03_01_EN.pdf Hersteller: Infineon Technologies
Discrete Semiconductor Modules L#T-BOND MODULE
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Technische Details TD190N18SOF Infineon Technologies

Category: Diode - thyristor modules, Description: Module: diode-thyristor; 1.8kV; 190A; BG-PB34SB-1; Ufmax: 1.52V, Type of semiconductor module: diode-thyristor, Semiconductor structure: double series, Max. off-state voltage: 1.8kV, Load current: 190A, Case: BG-PB34SB-1, Max. forward voltage: 1.52V, Max. forward impulse current: 5.2kA, Gate current: 145mA, Electrical mounting: FASTON connectors; screw, Max. load current: 190A, Mechanical mounting: screw.

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TD190N18SOF Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AAB34F2CAA03274A&compId=TT190N18SOF_TD190N18SOF.pdf?ci_sign=a3fb64be386bb6d818357cf109a848efc151a398 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 190A; BG-PB34SB-1; Ufmax: 1.52V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 190A
Case: BG-PB34SB-1
Max. forward voltage: 1.52V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Max. load current: 190A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH