Technische Details TD215N22KOF EUPEC
Category: Diode - thyristor modules, Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw, Max. forward impulse current: 7kA, Gate current: 200mA, Max. forward voltage: 1.8V, Type of semiconductor module: diode-thyristor, Mechanical mounting: screw, Max. off-state voltage: 2.2kV, Electrical mounting: screw, Load current: 215A, Max. load current: 410A, Semiconductor structure: double series, Case: BG-PB50-1.
Weitere Produktangebote TD215N22KOF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| TD215N22KOF | Infineon Technologies |
 Discrete Semiconductor Modules 2200V 410A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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TD215N22KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw Max. forward impulse current: 7kA Gate current: 200mA Max. forward voltage: 1.8V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 215A Max. load current: 410A Semiconductor structure: double series Case: BG-PB50-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TD215N22KOF |
|
Hersteller: Infineon Technologies
Discrete Semiconductor Modules 2200V 410A
Discrete Semiconductor Modules 2200V 410A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TD215N22KOFHPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. forward impulse current: 7kA
Gate current: 200mA
Max. forward voltage: 1.8V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 215A
Max. load current: 410A
Semiconductor structure: double series
Case: BG-PB50-1
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. forward impulse current: 7kA
Gate current: 200mA
Max. forward voltage: 1.8V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 215A
Max. load current: 410A
Semiconductor structure: double series
Case: BG-PB50-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH