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TDTA114Y,LM

TDTA114Y,LM Toshiba Semiconductor and Storage

docget.jsp?did=36687&prodName=TDTA114Y
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
auf Bestellung 2722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
120+0.15 EUR
192+0.092 EUR
500+0.066 EUR
1000+0.058 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TDTA114Y,LM Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A SOT23, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 250 MHz, Power - Max: 320 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Resistors Included: R1 and R2, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote TDTA114Y,LM

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TDTA114Y,LM TDTA114Y,LM Toshiba Semiconductor and Storage docget.jsp?did=36687&prodName=TDTA114Y Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Resistors Included: R1 and R2
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDTA114Y,LM TDTA114Y,LM Toshiba docget.jsp?did=36687&prodName=TDTA114Y Bipolar Transistors - Pre-Biased BRT -0.1A -50V 10KOhm / 47KOhm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDTA114Y,LM docget.jsp?did=36687&prodName=TDTA114Y
TDTA114Y,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Resistors Included: R1 and R2
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDTA114Y,LM docget.jsp?did=36687&prodName=TDTA114Y
TDTA114Y,LM
Hersteller: Toshiba
Bipolar Transistors - Pre-Biased BRT -0.1A -50V 10KOhm / 47KOhm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH