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TDTA123J,LM Toshiba Semiconductor and Storage

TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Hersteller: Toshiba Semiconductor and Storage
Description: PB-F BIAS RESISTOR BUILT-IN TRAN
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.049 EUR
Mindestbestellmenge: 3000
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Produktbewertung abgeben

Technische Details TDTA123J,LM Toshiba Semiconductor and Storage

Description: PB-F BIAS RESISTOR BUILT-IN TRAN, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms.

Weitere Produktangebote TDTA123J,LM nach Preis ab 0.059 EUR bis 0.28 EUR

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TDTA123J,LM Hersteller : Toshiba Semiconductor and Storage TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Description: PB-F BIAS RESISTOR BUILT-IN TRAN
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
88+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
Mindestbestellmenge: 63
TDTA123J,LM TDTA123J,LM Hersteller : Toshiba TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Bipolar Transistors - Pre-Biased BRT -0.1A -50V 2.2KOhm / 47KOhm
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