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TDTA123J,LM

TDTA123J,LM Toshiba Semiconductor and Storage

TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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Lieferzeit 10-14 Tag (e)
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117+0.15 EUR
188+0.094 EUR
500+0.068 EUR
1000+0.06 EUR
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Technische Details TDTA123J,LM Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V SOT23-3, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 320 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote TDTA123J,LM

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TDTA123J,LM TDTA123J,LM Toshiba Semiconductor and Storage TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDTA123J,LM TDTA123J,LM Toshiba TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J Digital Transistors BRT -0.1A -50V 2.2KOhm / 47KOhm
Produkt ist nicht verfügbar
 Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDTA123J,LM TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J
TDTA123J,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDTA123J,LM TDTA123J_datasheet_en_20201113.pdf?did=36689&prodName=TDTA123J
TDTA123J,LM
Hersteller: Toshiba
Digital Transistors BRT -0.1A -50V 2.2KOhm / 47KOhm
Produkt ist nicht verfügbar
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH