Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TDTC114Y,LM

TDTC114Y,LM Toshiba Semiconductor and Storage

TDTC114Y_datasheet_en_20201113.pdf?did=36702&prodName=TDTC114Y Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 79 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
86+ 0.21 EUR
159+ 0.11 EUR
500+ 0.087 EUR
1000+ 0.061 EUR
Mindestbestellmenge: 63
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Technische Details TDTC114Y,LM Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 79 @ 5mA, 5V, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms.

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TDTC114Y,LM Hersteller : Toshiba Semiconductor and Storage TDTC114Y_datasheet_en_20201113.pdf?did=36702&prodName=TDTC114Y Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 79 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Produkt ist nicht verfügbar
TDTC114Y,LM TDTC114Y,LM Hersteller : Toshiba TDTC114Y_datasheet_en_20201113.pdf?did=36702&prodName=TDTC114Y Bipolar Transistors - Pre-Biased BRT 0.1A 50V 10KOhm / 47KOhm
Produkt ist nicht verfügbar