Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TDTC143Z,LM
TDTC143Z,LM

TDTC143Z,LM Toshiba Semiconductor and Storage

TDTC143Z_datasheet_en_20201113.pdf?did=36374&prodName=TDTC143Z Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.048 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details TDTC143Z,LM Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms.

Weitere Produktangebote TDTC143Z,LM nach Preis ab 0.058 EUR bis 0.28 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TDTC143Z,LM TDTC143Z,LM Hersteller : Toshiba Semiconductor and Storage TDTC143Z_datasheet_en_20201113.pdf?did=36374&prodName=TDTC143Z Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
89+ 0.2 EUR
164+ 0.11 EUR
500+ 0.084 EUR
1000+ 0.058 EUR
Mindestbestellmenge: 63
TDTC143Z,LM TDTC143Z,LM Hersteller : Toshiba TDTC143Z_datasheet_en_20201113.pdf?did=36374&prodName=TDTC143Z Bipolar Transistors - Pre-Biased BRT 0.1A 50V 4.7KOhm / 47KOhm
Produkt ist nicht verfügbar