TGL200CU10 Diotec Semiconductor
auf Bestellung 7557 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.38 EUR |
| 53+ | 0.99 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.56 EUR |
| 5000+ | 0.41 EUR |
| 10000+ | 0.22 EUR |
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Technische Details TGL200CU10 Diotec Semiconductor
Category: Diodes - others, Description: Diode: TVS+FRD; 1kV; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; Ir: 5uA, Type of diode: TVS+FRD, Mounting: SMD, Max. off-state voltage: 1kV, Reverse recovery time: 75ns, Features of semiconductor devices: snubber diode; ultrafast switching, Case: DO213AA, Kind of package: reel; tape, Leakage current: 5µA, Max. forward impulse current: 1A, Breakdown voltage: 200V, Tolerance: ±10%, Peak pulse power dissipation: 0.3kW, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote TGL200CU10
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TGL200CU10 | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: Diodes - othersDescription: Diode: TVS+FRD; 1kV; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; Ir: 5uA Type of diode: TVS+FRD Mounting: SMD Max. off-state voltage: 1kV Reverse recovery time: 75ns Features of semiconductor devices: snubber diode; ultrafast switching Case: DO213AA Kind of package: reel; tape Leakage current: 5µA Max. forward impulse current: 1A Breakdown voltage: 200V Tolerance: ±10% Peak pulse power dissipation: 0.3kW Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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TGL200CU10 | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 162V Supplier Device Package: DO-213AB (MELF) Bidirectional Channels: 1 Voltage - Breakdown (Min): 180V Voltage - Clamping (Max) @ Ipp: 287V Power - Peak Pulse: 300W Power Line Protection: No |
Produkt ist nicht verfügbar |
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TGL200CU10 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Diodes - others Description: Diode: TVS+FRD; 1kV; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; Ir: 5uA Type of diode: TVS+FRD Mounting: SMD Max. off-state voltage: 1kV Reverse recovery time: 75ns Features of semiconductor devices: snubber diode; ultrafast switching Case: DO213AA Kind of package: reel; tape Leakage current: 5µA Max. forward impulse current: 1A Breakdown voltage: 200V Tolerance: ±10% Peak pulse power dissipation: 0.3kW |
Produkt ist nicht verfügbar |