TGL200CU10 Diotec Semiconductor
auf Bestellung 7326 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.76 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.17 EUR |
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Technische Details TGL200CU10 Diotec Semiconductor
Category: Diodes - others, Description: Diode: TVS+FRD; 1kV; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; Ir: 5uA, Type of diode: TVS+FRD, Case: DO213AA, Mounting: SMD, Max. off-state voltage: 1kV, Max. forward impulse current: 1A, Reverse recovery time: 75ns, Breakdown voltage: 200V, Leakage current: 5µA, Kind of package: reel; tape, Features of semiconductor devices: snubber diode; ultrafast switching, Peak pulse power dissipation: 0.3kW, Tolerance: ±10%, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote TGL200CU10
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TGL200CU10 | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: Diodes - othersDescription: Diode: TVS+FRD; 1kV; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; Ir: 5uA Type of diode: TVS+FRD Case: DO213AA Mounting: SMD Max. off-state voltage: 1kV Max. forward impulse current: 1A Reverse recovery time: 75ns Breakdown voltage: 200V Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: snubber diode; ultrafast switching Peak pulse power dissipation: 0.3kW Tolerance: ±10% Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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TGL200CU10 | Hersteller : Diotec Semiconductor |
Description: TVS DIODE 162VWM 287VC DO213AB Packaging: Bulk Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 162V Supplier Device Package: DO-213AB (MELF) Bidirectional Channels: 1 Voltage - Breakdown (Min): 180V Voltage - Clamping (Max) @ Ipp: 287V Power - Peak Pulse: 300W Power Line Protection: No |
Produkt ist nicht verfügbar |
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TGL200CU10 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Diodes - others Description: Diode: TVS+FRD; 1kV; 300W; DO213AA; 75ns; Ifsm: 1A; reel,tape; Ir: 5uA Type of diode: TVS+FRD Case: DO213AA Mounting: SMD Max. off-state voltage: 1kV Max. forward impulse current: 1A Reverse recovery time: 75ns Breakdown voltage: 200V Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: snubber diode; ultrafast switching Peak pulse power dissipation: 0.3kW Tolerance: ±10% |
Produkt ist nicht verfügbar |