TJ10S04M3L,LXHQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.6 EUR |
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Technische Details TJ10S04M3L,LXHQ Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +10V, -20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 27W (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote TJ10S04M3L,LXHQ nach Preis ab 0.51 EUR bis 2.2 EUR
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TJ10S04M3L,LXHQ | Hersteller : Toshiba |
MOSFETs 27W 1MHz Automotive; AEC-Q101 |
auf Bestellung 19147 Stücke: Lieferzeit 10-14 Tag (e) |
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TJ10S04M3L,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 10A DPAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 3780 Stücke: Lieferzeit 10-14 Tag (e) |
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