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TJ15P04M3,RQ(S

TJ15P04M3,RQ(S Toshiba

44179571833070634417956427840856tj15p04m3_datasheet_en_20150407.pdf.pdf Hersteller: Toshiba
Trans MOSFET P-CH Si 40V 15A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 5718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
107+1.48 EUR
219+ 0.7 EUR
240+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.41 EUR
2000+ 0.39 EUR
4000+ 0.37 EUR
Mindestbestellmenge: 107
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Technische Details TJ15P04M3,RQ(S Toshiba

Description: MOSFET P-CH 40V 15A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 7.5A, 10V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V.

Weitere Produktangebote TJ15P04M3,RQ(S nach Preis ab 0.82 EUR bis 2.03 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TJ15P04M3,RQ(S TJ15P04M3,RQ(S Hersteller : Toshiba Semiconductor and Storage TJ15P04M3_datasheet_en_20150407.pdf?did=22023&prodName=TJ15P04M3 Description: MOSFET P-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 7.5A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
auf Bestellung 798 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2 EUR
16+ 1.63 EUR
100+ 1.27 EUR
500+ 1.07 EUR
Mindestbestellmenge: 13
TJ15P04M3,RQ(S TJ15P04M3,RQ(S Hersteller : Toshiba TJ15P04M3_datasheet_en_20150407-1135539.pdf MOSFET P-Ch MOS 1100 pF 29W PD -15A -40V
auf Bestellung 1736 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.03 EUR
31+ 1.73 EUR
100+ 1.35 EUR
500+ 1.13 EUR
1000+ 0.94 EUR
2000+ 0.88 EUR
4000+ 0.82 EUR
Mindestbestellmenge: 26
TJ15P04M3,RQ(S TJ15P04M3,RQ(S Hersteller : Toshiba 44179571833070634417956427840856tj15p04m3_datasheet_en_20150407.pdf.pdf Trans MOSFET P-CH Si 40V 15A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TJ15P04M3,RQ(S TJ15P04M3,RQ(S Hersteller : Toshiba 44179571833070634417956427840856tj15p04m3_datasheet_en_20150407.pdf.pdf Trans MOSFET P-CH Si 40V 15A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TJ15P04M3,RQ(S TJ15P04M3,RQ(S Hersteller : Toshiba Semiconductor and Storage TJ15P04M3_datasheet_en_20150407.pdf?did=22023&prodName=TJ15P04M3 Description: MOSFET P-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 7.5A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Produkt ist nicht verfügbar