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TJ15P04M3,RQ(S

TJ15P04M3,RQ(S Toshiba Semiconductor and Storage

TJ15P04M3_datasheet_en_20150407.pdf?did=22023&prodName=TJ15P04M3
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 15A DPAK
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 100µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 7.5A, 10V
auf Bestellung 798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
16+1.1 EUR
100+0.86 EUR
500+0.73 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TJ15P04M3,RQ(S Toshiba Semiconductor and Storage

Description: MOSFET P-CH 40V 15A DPAK, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2V @ 100µA, Power Dissipation (Max): 29W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active.

Weitere Produktangebote TJ15P04M3,RQ(S nach Preis ab 0.55 EUR bis 1.37 EUR

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TJ15P04M3,RQ(S TJ15P04M3,RQ(S Hersteller : Toshiba TJ15P04M3_datasheet_en_20150407-1135539.pdf MOSFET P-Ch MOS 1100 pF 29W PD -15A -40V
auf Bestellung 1736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.37 EUR
10+1.17 EUR
100+0.91 EUR
500+0.76 EUR
1000+0.64 EUR
2000+0.6 EUR
4000+0.55 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TJ15P04M3,RQ(S TJ15P04M3,RQ(S Hersteller : Toshiba Semiconductor and Storage TJ15P04M3_datasheet_en_20150407.pdf?did=22023&prodName=TJ15P04M3 Description: MOSFET P-CH 40V 15A DPAK
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 100µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
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Im Einkaufswagen  Stück im Wert von  UAH