Produkte > TOSHIBA > TJ15S06M3L(T6L1,NQ

TJ15S06M3L(T6L1,NQ TOSHIBA

Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; 41W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: -60V
Drain current: -15A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: -20...10V
Anzahl je Verpackung: 2000 Stücke

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Technische Details TJ15S06M3L(T6L1,NQ TOSHIBA

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -15A; 41W; DPAK, Mounting: SMD, Case: DPAK, Drain-source voltage: -60V, Drain current: -15A, On-state resistance: 43mΩ, Type of transistor: P-MOSFET, Power dissipation: 41W, Polarisation: unipolar, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Gate charge: 36nC, Kind of channel: enhanced, Gate-source voltage: -20...10V, Anzahl je Verpackung: 2000 Stücke.

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TJ15S06M3L(T6L1,NQ	Hersteller : TOSHIBA	Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15A; 41W; DPAK Mounting: SMD Case: DPAK Drain-source voltage: -60V Drain current: -15A On-state resistance: 43mΩ Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: -20...10V	Produkt ist nicht verfügbar