Produkte > TOSHIBA > TJ200F04M3L,LXHQ
TJ200F04M3L,LXHQ

TJ200F04M3L,LXHQ Toshiba

20B3A04CDDA85B8AB972EB9FEED549C4B1734FF252D90E664C69EE2809D2E30D.pdf Hersteller: Toshiba
MOSFETs 375W 1MHz Automotive; AEC-Q101
auf Bestellung 50646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.4 EUR
10+4.05 EUR
100+2.89 EUR
500+2.66 EUR
1000+2.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TJ200F04M3L,LXHQ Toshiba

Description: MOSFET P-CH 40V 200A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-220SM(W), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote TJ200F04M3L,LXHQ nach Preis ab 2.7 EUR bis 5.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Hersteller : Toshiba Semiconductor and Storage TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.42 EUR
10+4.04 EUR
100+2.95 EUR
500+2.7 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TJ200F04M3L,LXHQ
Produktcode: 170672
zu Favoriten hinzufügen Lieblingsprodukt

TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Hersteller : Toshiba docget.pdf Trans MOSFET P-CH Si 40V 200A Automotive AEC-Q101 3-Pin(2+Tab) TO-220SM(W) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Hersteller : Toshiba Semiconductor and Storage TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH