auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.66 EUR |
| 10+ | 1.48 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.95 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TJ20A10M3(STA4,Q Toshiba
Description: TJ20A10M3(STA4,Q, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V.
Weitere Produktangebote TJ20A10M3(STA4,Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
TJ20A10M3(STA4,Q | Hersteller : Toshiba |
 Trans MOSFET P-CH Si 100V 20A 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
|
| TJ20A10M3(STA4,Q | Hersteller : Toshiba Semiconductor and Storage |
Description: TJ20A10M3(STA4,Q Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
Produkt ist nicht verfügbar |