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TJ20S04M3L(T6L1,NQ

TJ20S04M3L(T6L1,NQ Toshiba Semiconductor and Storage

TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
auf Bestellung 1067 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+1.9 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.93 EUR
Mindestbestellmenge: 6
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Technische Details TJ20S04M3L(T6L1,NQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 40V 20A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +10V, -20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 41W (Tc), Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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TJ20S04M3L(T6L1,NQ TJ20S04M3L(T6L1,NQ Hersteller : Toshiba 2FBDBB5536B6C2E54DFCA9AEE82AA7C30277D3FBB58AAB536C4D33745A047C92.pdf MOSFETs P-Ch MOS -20A -40V 41W 1850pF 0.0222
auf Bestellung 281 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.04 EUR
10+1.94 EUR
100+1.3 EUR
500+1.03 EUR
1000+0.95 EUR
2000+0.86 EUR
4000+0.83 EUR
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TJ20S04M3L(T6L1,NQ TJ20S04M3L(T6L1,NQ Hersteller : Toshiba Semiconductor and Storage TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L Description: MOSFET P-CH 40V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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