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TJ20S04M3L,LXHQ

TJ20S04M3L,LXHQ Toshiba Semiconductor and Storage

TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.63 EUR
4000+0.58 EUR
6000+0.56 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TJ20S04M3L,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 40V 20A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V.

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TJ20S04M3L,LXHQ TJ20S04M3L,LXHQ Hersteller : Toshiba TJ20S04M3L_datasheet_en_20241218-1840193.pdf MOSFETs 41W 1MHz Automotive; AEC-Q101
auf Bestellung 22333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.36 EUR
10+1.1 EUR
100+0.81 EUR
500+0.68 EUR
1000+0.63 EUR
2000+0.53 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TJ20S04M3L,LXHQ TJ20S04M3L,LXHQ Hersteller : Toshiba Semiconductor and Storage TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L Description: MOSFET P-CH 40V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 9718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.31 EUR
13+1.46 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH