TJ30S06M3L(T6L1,NQ Toshiba
| Anzahl | Privatkunde |
|---|---|
| 105+ | 1.68 EUR |
| 124+ | 1.4 EUR |
| 145+ | 1.18 EUR |
| 200+ | 1.09 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.93 EUR |
| 2000+ | 0.86 EUR |
Produktrezensionen
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Technische Details TJ30S06M3L(T6L1,NQ Toshiba
Description: MOSFET P-CH 60V 30A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V.
Weitere Produktangebote TJ30S06M3L(T6L1,NQ nach Preis ab 1.29 EUR bis 4.38 EUR
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TJ30S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
 Description: MOSFET P-CH 60V 30A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V |
auf Bestellung 1423 Stücke: Lieferzeit 10-14 Tag (e) |
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TJ30S06M3L(T6L1,NQ | Toshiba |
MOSFETs P-Ch MOS -30A -60V 68W 3950pF 0.0218 |
auf Bestellung 5442 Stücke: Lieferzeit 10-14 Tag (e) |
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| TJ30S06M3L(T6L1,NQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
auf Bestellung 1423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.06 EUR |
| 10+ | 2.62 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.38 EUR |
| TJ30S06M3L(T6L1,NQ |
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Hersteller: Toshiba
MOSFETs P-Ch MOS -30A -60V 68W 3950pF 0.0218
MOSFETs P-Ch MOS -30A -60V 68W 3950pF 0.0218
auf Bestellung 5442 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.38 EUR |
| 10+ | 2.81 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.4 EUR |
| 2000+ | 1.29 EUR |