auf Bestellung 416 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 104+ | 1.51 EUR |
| 109+ | 1.39 EUR |
| 250+ | 1.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TJ30S06M3L,LXHQ(O Toshiba
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 68W; DPAK, Kind of package: reel; tape, Drain current: -30A, On-state resistance: 16.8mΩ, Type of transistor: P-MOSFET, Power dissipation: 68W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Gate charge: 80nC, Kind of channel: enhanced, Gate-source voltage: -20...10V, Mounting: SMD, Case: DPAK, Drain-source voltage: -60V, Anzahl je Verpackung: 2000 Stücke.
Weitere Produktangebote TJ30S06M3L,LXHQ(O
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| TJ30S06M3L,LXHQ(O | Hersteller : Toshiba |
 TJ30S06M3L,LXHQ(O |
Produkt ist nicht verfügbar |
||
 |
TJ30S06M3L,LXHQ(O | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 68W; DPAK Kind of package: reel; tape Drain current: -30A On-state resistance: 16.8mΩ Type of transistor: P-MOSFET Power dissipation: 68W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: -20...10V Mounting: SMD Case: DPAK Drain-source voltage: -60V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
|
|
|
TJ30S06M3L,LXHQ(O | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 68W; DPAK Kind of package: reel; tape Drain current: -30A On-state resistance: 16.8mΩ Type of transistor: P-MOSFET Power dissipation: 68W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: -20...10V Mounting: SMD Case: DPAK Drain-source voltage: -60V |
Produkt ist nicht verfügbar |