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TJ30S06M3L,LXHQ

TJ30S06M3L,LXHQ Toshiba Semiconductor and Storage

TJ30S06M3L_datasheet_en_20200624.pdf?did=22571&prodName=TJ30S06M3L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+1.15 EUR
Mindestbestellmenge: 2000
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Technische Details TJ30S06M3L,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 60V 30A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V.

Weitere Produktangebote TJ30S06M3L,LXHQ nach Preis ab 1.1 EUR bis 2.76 EUR

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TJ30S06M3L,LXHQ TJ30S06M3L,LXHQ Hersteller : Toshiba Semiconductor and Storage TJ30S06M3L_datasheet_en_20200624.pdf?did=22571&prodName=TJ30S06M3L Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
auf Bestellung 3952 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.76 EUR
12+ 2.27 EUR
100+ 1.76 EUR
500+ 1.49 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 10
TJ30S06M3L,LXHQ TJ30S06M3L,LXHQ Hersteller : Toshiba TJ30S06M3L_datasheet_en_20200624-1858413.pdf MOSFET 68W 1MHz Automotive; AEC-Q101
auf Bestellung 6031 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.76 EUR
23+ 2.28 EUR
100+ 1.77 EUR
500+ 1.5 EUR
1000+ 1.22 EUR
2000+ 1.15 EUR
4000+ 1.1 EUR
Mindestbestellmenge: 19