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TJ60S04M3L(T6L1,NQ

TJ60S04M3L(T6L1,NQ Toshiba

81CEA085CDAA72CE7AC609D7771D25F7B54D6C3989C886661FB112E1C97AEBE2.pdf
Hersteller: Toshiba
MOSFETs P-Ch MOS -60A -40V 90W 6510pF 0.0063
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Lieferzeit 10-14 Tag (e)
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10+2.39 EUR
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Technische Details TJ60S04M3L(T6L1,NQ Toshiba

Description: MOSFET P-CH 40V 60A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +10V, -20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote TJ60S04M3L(T6L1,NQ

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage TJ60S04M3L_datasheet_en_20200624.pdf?did=11301&prodName=TJ60S04M3L Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage TJ60S04M3L_datasheet_en_20200624.pdf?did=11301&prodName=TJ60S04M3L Description: MOSFET P-CH 40V 60A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S04M3L(T6L1,NQ TJ60S04M3L_datasheet_en_20200624.pdf?did=11301&prodName=TJ60S04M3L
TJ60S04M3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S04M3L(T6L1,NQ TJ60S04M3L_datasheet_en_20200624.pdf?did=11301&prodName=TJ60S04M3L
TJ60S04M3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH