Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TJ60S04M3L(T6L1,NQ
TJ60S04M3L(T6L1,NQ

TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage

docget.jsp?did=11301&prodName=TJ60S04M3L
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.11 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 40V 60A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +10V, -20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote TJ60S04M3L(T6L1,NQ nach Preis ab 1.05 EUR bis 3.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba docget.pdf Trans MOSFET P-CH Si 40V 60A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
102+1.74 EUR
107+1.63 EUR
250+1.54 EUR
500+1.44 EUR
1000+1.38 EUR
Mindestbestellmenge: 102 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba 81CEA085CDAA72CE7AC609D7771D25F7B54D6C3989C886661FB112E1C97AEBE2.pdf MOSFETs P-Ch MOS -60A -40V 90W 6510pF 0.0063
auf Bestellung 825 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.75 EUR
10+2.39 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.18 EUR
2000+1.08 EUR
4000+1.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=11301&prodName=TJ60S04M3L Description: MOSFET P-CH 40V 60A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2222 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
10+2.44 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba docget.pdf Trans MOSFET P-CH Si 40V 60A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S04M3L(T6L1,NQ docget.pdf
TJ60S04M3L(T6L1,NQ
Hersteller: Toshiba
Trans MOSFET P-CH Si 40V 60A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
102+1.74 EUR
107+1.63 EUR
250+1.54 EUR
500+1.44 EUR
1000+1.38 EUR
Mindestbestellmenge: 102 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S04M3L(T6L1,NQ 81CEA085CDAA72CE7AC609D7771D25F7B54D6C3989C886661FB112E1C97AEBE2.pdf
TJ60S04M3L(T6L1,NQ
Hersteller: Toshiba
MOSFETs P-Ch MOS -60A -40V 90W 6510pF 0.0063
auf Bestellung 825 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.75 EUR
10+2.39 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.18 EUR
2000+1.08 EUR
4000+1.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S04M3L(T6L1,NQ docget.jsp?did=11301&prodName=TJ60S04M3L
TJ60S04M3L(T6L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2222 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.81 EUR
10+2.44 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S04M3L(T6L1,NQ docget.pdf
TJ60S04M3L(T6L1,NQ
Hersteller: Toshiba
Trans MOSFET P-CH Si 40V 60A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH