auf Bestellung 5154 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 5.15 EUR |
| 13+ | 4.29 EUR |
| 100+ | 3.41 EUR |
| 500+ | 2.91 EUR |
| 1000+ | 2.47 EUR |
| 2000+ | 2.25 EUR |
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Technische Details TJ60S06M3L(T6L1,NQ Toshiba
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -60A; Idm: -120A; 100W; DPAK, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -60A, Pulsed drain current: -120A, Power dissipation: 100W, Case: DPAK, Gate-source voltage: -20...10V, On-state resistance: 14.5mΩ, Mounting: SMD, Gate charge: 156nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TJ60S06M3L(T6L1,NQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| TJ60S06M3L(T6L1,NQ | Hersteller : TOSHIBA |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -60A; Idm: -120A; 100W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -60A Pulsed drain current: -120A Power dissipation: 100W Case: DPAK Gate-source voltage: -20...10V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 60A DPAK-3 |
Produkt ist nicht verfügbar |
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| TJ60S06M3L(T6L1,NQ | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -60A; Idm: -120A; 100W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -60A Pulsed drain current: -120A Power dissipation: 100W Case: DPAK Gate-source voltage: -20...10V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |