TJ60S06M3L(T6L1,NQ Toshiba
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TJ60S06M3L(T6L1,NQ Toshiba
Description: MOSFET P-CH 60V 60A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V.
Weitere Produktangebote TJ60S06M3L(T6L1,NQ nach Preis ab 0.79 EUR bis 4.82 EUR
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba |
 Trans MOSFET P-CH Si 60V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
auf Bestellung 1324 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
auf Bestellung 1324 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
auf Bestellung 1755 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba |
MOSFETs P-Ch MOS -60A -60V 100W 7760pF 0.0112 |
auf Bestellung 4558 Stücke: Lieferzeit 10-14 Tag (e) |
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V |
auf Bestellung 2240 Stücke: Lieferzeit 10-14 Tag (e) |
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
Produkt ist nicht verfügbar |
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 60A Automotive 3-Pin(2+Tab) DPAK+ T/R |
Produkt ist nicht verfügbar |
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| TJ60S06M3L(T6L1,NQ | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -60A; Idm: -120A; 100W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -60A Pulsed drain current: -120A Power dissipation: 100W Case: DPAK Gate-source voltage: -20...10V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TJ60S06M3L(T6L1,NQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 60A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V |
Produkt ist nicht verfügbar |
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| TJ60S06M3L(T6L1,NQ | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -60A; Idm: -120A; 100W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -60A Pulsed drain current: -120A Power dissipation: 100W Case: DPAK Gate-source voltage: -20...10V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |