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TJ60S06M3L,LXHQ

TJ60S06M3L,LXHQ Toshiba Semiconductor and Storage

docget.jsp?did=11303&prodName=TJ60S06M3L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.02 EUR
4000+0.97 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TJ60S06M3L,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 60V 60A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote TJ60S06M3L,LXHQ nach Preis ab 1.03 EUR bis 3.15 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TJ60S06M3L,LXHQ TJ60S06M3L,LXHQ Hersteller : Toshiba TJ60S06M3L_datasheet_en_20200706-1143625.pdf MOSFETs 100W 1MHz Automotive; AEC-Q101
auf Bestellung 19915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.12 EUR
10+2.11 EUR
100+1.45 EUR
500+1.17 EUR
1000+1.08 EUR
2000+1.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S06M3L,LXHQ TJ60S06M3L,LXHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=11303&prodName=TJ60S06M3L Description: MOSFET P-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5383 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
10+2.14 EUR
100+1.47 EUR
500+1.20 EUR
1000+1.10 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TJ60S06M3L,LXHQ TJ60S06M3L,LXHQ Hersteller : Toshiba tj60s06m3l_datasheet_en_20200706.pdf Trans MOSFET P-CH Si 60V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH