auf Bestellung 48345 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
24+ | 2.23 EUR |
28+ | 1.92 EUR |
100+ | 1.33 EUR |
500+ | 1.11 EUR |
1000+ | 0.95 EUR |
2000+ | 0.86 EUR |
4000+ | 0.8 EUR |
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Technische Details TJ8S06M3L,LXHQ Toshiba
Description: MOSFET P-CH 60V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V.
Weitere Produktangebote TJ8S06M3L,LXHQ
Foto | Bezeichnung | Hersteller | Beschreibung |
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TJ8S06M3L,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
Produkt ist nicht verfügbar |
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TJ8S06M3L,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
Produkt ist nicht verfügbar |