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TJ90S04M3L,LQ

TJ90S04M3L,LQ Toshiba Semiconductor and Storage

docget.jsp?did=58174&prodName=TJ90S04M3L Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.41 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TJ90S04M3L,LQ Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR DPA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK+, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V, Qualification: AEC-Q101.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TJ90S04M3L,LQ TJ90S04M3L,LQ Hersteller : Toshiba A71277B521F1BA35890D306FD531C3B319C29FBCA88ECD9F1D8BC67B652DE051.pdf MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK+ PD=180W F=1MHZ
auf Bestellung 9101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.8 EUR
10+2.75 EUR
100+1.94 EUR
500+1.65 EUR
1000+1.59 EUR
2000+1.45 EUR
10000+1.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TJ90S04M3L,LQ TJ90S04M3L,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=58174&prodName=TJ90S04M3L Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2864 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.84 EUR
10+2.77 EUR
100+1.96 EUR
500+1.63 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TJ90S04M3L,LQ TJ90S04M3L,LQ Hersteller : Toshiba docget.pdf Trans MOSFET P-CH Si 40V 90A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TJ90S04M3L,LQ TJ90S04M3L,LQ Hersteller : Toshiba docget.pdf Trans MOSFET P-CH Si 40V 90A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH