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TJ90S04M3L,LXHQ

TJ90S04M3L,LXHQ Toshiba Semiconductor and Storage

docget.jsp?did=58174&prodName=TJ90S04M3L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.11 EUR
4000+1.07 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TJ90S04M3L,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 40V 90A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

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TJ90S04M3L,LXHQ TJ90S04M3L,LXHQ Hersteller : Toshiba TJ90S04M3L_datasheet_en_20200624-1649716.pdf MOSFET 180W 1MHz Automotive; AEC-Q101
auf Bestellung 17353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.53 EUR
10+2.11 EUR
100+1.69 EUR
250+1.61 EUR
500+1.40 EUR
1000+1.20 EUR
2000+1.14 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TJ90S04M3L,LXHQ TJ90S04M3L,LXHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=58174&prodName=TJ90S04M3L Description: MOSFET P-CH 40V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4244 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+2.12 EUR
100+1.62 EUR
500+1.32 EUR
1000+1.18 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH