| Anzahl | Preis |
|---|---|
| 1+ | 16.17 EUR |
| 10+ | 9.7 EUR |
| 120+ | 9.68 EUR |
| 510+ | 8.08 EUR |
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Technische Details TK040N60Z1,S1F Toshiba
Description: MOSFET N-CH 600V 52A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 21.2A, 10V, Power Dissipation (Max): 297W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.4mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 300 V.
Weitere Produktangebote TK040N60Z1,S1F nach Preis ab 9.58 EUR bis 16.19 EUR
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TK040N60Z1,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 52A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 21.2A, 10V Power Dissipation (Max): 297W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.4mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 300 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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