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TK040N60Z1,S1F

TK040N60Z1,S1F Toshiba Semiconductor and Storage

docget.jsp?did=154765&prodName=TK040N60Z1 Hersteller: Toshiba Semiconductor and Storage
Description: 600V DTMOS6 TO-247 40MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 21.2A, 10V
Power Dissipation (Max): 297W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
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2+14.91 EUR
30+8.83 EUR
Mindestbestellmenge: 2
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Technische Details TK040N60Z1,S1F Toshiba Semiconductor and Storage

Description: 600V DTMOS6 TO-247 40MOHM, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 21.2A, 10V, Power Dissipation (Max): 297W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.4mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 300 V.

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TK040N60Z1,S1F TK040N60Z1,S1F Hersteller : Toshiba D8677C4E71E8CE3BC01A735DAD204A35AB382A6576A340DAA4F633A4F79C4908.pdf MOSFETs 600V DTMOS6 TO-247 40mohm
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