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Technische Details TK040N65Z,S1F Toshiba
Description: MOSFET N-CH 650V 57A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.85mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V.
Weitere Produktangebote TK040N65Z,S1F nach Preis ab 12.41 EUR bis 24.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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TK040N65Z,S1F | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 57A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.85mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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TK040N65Z,S1F | Toshiba |
Trans MOSFET N-CH Si 650V 57A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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TK040N65Z,S1F | Toshiba |
Trans MOSFET N-CH Si 650V 57A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TK040N65Z,S1F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 57A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Description: MOSFET N-CH 650V 57A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.25 EUR |
| 30+ | 14.54 EUR |
| 60+ | 13.38 EUR |
| 120+ | 12.41 EUR |
| TK040N65Z,S1F |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 57A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH Si 650V 57A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| TK040N65Z,S1F |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 57A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH Si 650V 57A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)