TK040N65Z Toshiba

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 57A; Idm: 228A; 360W; TO247-3, Type of transistor: N-MOSFET, Power dissipation: 360W, Case: TO247-3, Mounting: THT, Gate charge: 105nC, Kind of package: tube, On-state resistance: 33mΩ, Pulsed drain current: 228A, Polarisation: unipolar, Drain current: 57A, Kind of channel: enhancement, Drain-source voltage: 650V, Gate-source voltage: ±30V.