| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.75 EUR |
| 10+ | 19.96 EUR |
| 25+ | 18.52 EUR |
| 100+ | 16.62 EUR |
| 250+ | 15.84 EUR |
| 500+ | 14.68 EUR |
| 1000+ | 13.22 EUR |
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Technische Details TK040Z65Z,S1F Toshiba
Description: MOSFET N-CH 650V 57A TO247-4L, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-4L(T), Vgs(th) (Max) @ Id: 4V @ 2.85mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 57A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-247-4.
Weitere Produktangebote TK040Z65Z,S1F nach Preis ab 26.04 EUR bis 26.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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TK040Z65Z,S1F | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 57A TO247-4LPackaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-4L(T) Vgs(th) (Max) @ Id: 4V @ 2.85mA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Current - Continuous Drain (Id) @ 25°C: 57A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-4 |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK040Z65Z,S1F |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 57A TO247-4L
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L(T)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
Description: MOSFET N-CH 650V 57A TO247-4L
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L(T)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.04 EUR |