| Anzahl | Preis |
|---|---|
| 1+ | 19.96 EUR |
| 10+ | 16.77 EUR |
| 25+ | 15.56 EUR |
| 100+ | 13.97 EUR |
| 250+ | 13.31 EUR |
| 500+ | 12.34 EUR |
| 1000+ | 11.11 EUR |
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Technische Details TK040Z65Z,S1F Toshiba
Description: MOSFET N-CH 650V 57A TO247-4L, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-4L(T), Vgs(th) (Max) @ Id: 4V @ 2.85mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 57A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-247-4.
Weitere Produktangebote TK040Z65Z,S1F nach Preis ab 21.88 EUR bis 21.88 EUR
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TK040Z65Z,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 57A TO247-4LPackaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-4L(T) Vgs(th) (Max) @ Id: 4V @ 2.85mA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Current - Continuous Drain (Id) @ 25°C: 57A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-4 |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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