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TK065U65Z,RQ

TK065U65Z,RQ Toshiba Semiconductor and Storage

TK065U65Z.pdf Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
auf Bestellung 2013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.87 EUR
10+ 8.47 EUR
100+ 7.06 EUR
500+ 6.23 EUR
1000+ 5.61 EUR
Mindestbestellmenge: 2
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Technische Details TK065U65Z,RQ Toshiba Semiconductor and Storage

Description: DTMOS VI TOLL PD=270W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.69mA, Supplier Device Package: TOLL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V.

Weitere Produktangebote TK065U65Z,RQ nach Preis ab 8.32 EUR bis 14.69 EUR

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TK065U65Z,RQ TK065U65Z,RQ Hersteller : Toshiba TK065U65Z_datasheet_en_20211203-2005141.pdf MOSFET POWER MOSFET TRANSISTOR TOLL PD=270W F=1MHZ
auf Bestellung 3485 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.69 EUR
10+ 12.61 EUR
25+ 11.41 EUR
100+ 10.5 EUR
250+ 9.85 EUR
500+ 9.26 EUR
1000+ 8.32 EUR
Mindestbestellmenge: 4
TK065U65Z,RQ TK065U65Z,RQ Hersteller : Toshiba tk065u65z_datasheet_en_20201027.pdf Trans MOSFET N-CH Si 650V 38A 9-Pin(8+Tab) TOLL T/R
Produkt ist nicht verfügbar
TK065U65Z,RQ TK065U65Z,RQ Hersteller : Toshiba tk065u65z_datasheet_en_20201027.pdf Trans MOSFET N-CH Si 650V 38A 9-Pin(8+Tab) TOLL T/R
Produkt ist nicht verfügbar
TK065U65Z,RQ TK065U65Z,RQ Hersteller : Toshiba tk065u65z_datasheet_en_20201027.pdf Trans MOSFET N-CH Si 650V 38A 9-Pin(8+Tab) TOLL T/R
Produkt ist nicht verfügbar
TK065U65Z,RQ TK065U65Z,RQ Hersteller : Toshiba Semiconductor and Storage TK065U65Z.pdf Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
Produkt ist nicht verfügbar