TK068N65Z5,S1F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: 650V DTMOS6-HSD TO-247 68MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 18.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.69mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 300 V
| Anzahl | Preis |
|---|---|
| 2+ | 15.38 EUR |
| 30+ | 9.14 EUR |
| 120+ | 7.78 EUR |
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Technische Details TK068N65Z5,S1F Toshiba Semiconductor and Storage
Description: 650V DTMOS6-HSD TO-247 68MOHM, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Ta), Rds On (Max) @ Id, Vgs: 68mOhm @ 18.5A, 10V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.69mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 300 V.
Weitere Produktangebote TK068N65Z5,S1F nach Preis ab 8.61 EUR bis 15.45 EUR
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TK068N65Z5,S1F | Hersteller : Toshiba |
MOSFETs TO247 650V 1.69A N-CH |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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