auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.4 EUR |
| 10+ | 7.2 EUR |
| 120+ | 5.81 EUR |
| 510+ | 5.16 EUR |
| 1020+ | 4.42 EUR |
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Technische Details TK080N60Z1,S1F Toshiba
Description: 600V DTMOS6 TO-247 80MOHM, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.17mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V.
Weitere Produktangebote TK080N60Z1,S1F nach Preis ab 6.28 EUR bis 9.43 EUR
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TK080N60Z1,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: 600V DTMOS6 TO-247 80MOHMPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.17mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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