TK080N60Z1,S1F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: 600V DTMOS6 TO-247 80MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 8.91 EUR |
| 30+ | 6.5 EUR |
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Technische Details TK080N60Z1,S1F Toshiba Semiconductor and Storage
Description: 600V DTMOS6 TO-247 80MOHM, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.17mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V.
Weitere Produktangebote TK080N60Z1,S1F nach Preis ab 4.63 EUR bis 8.98 EUR
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TK080N60Z1,S1F | Hersteller : Toshiba |
MOSFETs 600V DTMOS6 TO-247 80mohm |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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