TK080U60Z1,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
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Technische Details TK080U60Z1,RQ Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TOLL, Vgs(th) (Max) @ Id: 4V @ 1.17mA, Power Dissipation (Max): 211W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel.
Weitere Produktangebote TK080U60Z1,RQ nach Preis ab 3.47 EUR bis 9.12 EUR
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TK080U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.08 @10V, T Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 4V @ 1.17mA Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK080U60Z1,RQ | Toshiba |
MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET |
auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK080U60Z1,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.09 EUR |
| 10+ | 6.05 EUR |
| 100+ | 4.31 EUR |
| 500+ | 4.09 EUR |
| TK080U60Z1,RQ |
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Hersteller: Toshiba
MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET
MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.12 EUR |
| 10+ | 6.06 EUR |
| 100+ | 4.32 EUR |
| 500+ | 4.11 EUR |
| 2000+ | 3.47 EUR |