TK080U60Z1,RQ

TK080U60Z1,RQ Toshiba Semiconductor and Storage


TK080U60Z1_datasheet_en_20240605.pdf?did=158303&prodName=TK080U60Z1
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.81 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK080U60Z1,RQ Toshiba Semiconductor and Storage

Description: N-CH MOSFET, 600 V, 0.08 @10V, T, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TOLL, Vgs(th) (Max) @ Id: 4V @ 1.17mA, Power Dissipation (Max): 211W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel.

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TK080U60Z1,RQ TK080U60Z1,RQ Hersteller : Toshiba Semiconductor and Storage TK080U60Z1_datasheet_en_20240605.pdf?did=158303&prodName=TK080U60Z1 Description: N-CH MOSFET, 600 V, 0.08 @10V, T
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.64 EUR
10+5.08 EUR
100+3.62 EUR
500+3.44 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK080U60Z1,RQ TK080U60Z1,RQ Hersteller : Toshiba TK080U60Z1_datasheet_en_20240605-3601067.pdf MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.66 EUR
10+5.09 EUR
100+3.63 EUR
500+3.45 EUR
2000+2.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH