TK080U60Z1,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: N-CH MOSFET, 600 V, 0.08 @10V, T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.17mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 2.81 EUR |
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Technische Details TK080U60Z1,RQ Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.08 @10V, T, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.17mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V.
Weitere Produktangebote TK080U60Z1,RQ nach Preis ab 2.92 EUR bis 7.66 EUR
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TK080U60Z1,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.08 @10V, T Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 10.3A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.17mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 300 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TK080U60Z1,RQ | Hersteller : Toshiba |
MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET |
auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
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