TK095N65Z5,S1F Toshiba Semiconductor and Storage

Description: 650V DTMOS6-HIGH SPEED DIODE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.27mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V.