auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.96 EUR |
| 10+ | 7.39 EUR |
| 120+ | 6.21 EUR |
| 510+ | 5.9 EUR |
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Technische Details TK095N65Z5,S1F Toshiba
Description: 650V DTMOS6-HIGH SPEED DIODE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.27mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V.
Weitere Produktangebote TK095N65Z5,S1F nach Preis ab 6.38 EUR bis 12.37 EUR
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TK095N65Z5,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: 650V DTMOS6-HIGH SPEED DIODEPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.27mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V |
auf Bestellung 195 Stücke: Lieferzeit 10-14 Tag (e) |
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